OPA9438EU Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA9438EU
Infrared LED Chip
GaAs/GaAs
1. Material
Substrate
GaAs (P Type)
Epitaxial Layer GaAs (N/P Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal)
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage ^V_F
1.25 1.4
V IF=30mA
Reverse Voltage V_R
8
V IR=10uA
Power
P_O 9.0 11.5
mW IF=100mA
Wavelength
λ_P
940
∆λ
45
nm IF=20mA
nm IF=20mA
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
(c)
--------------------- 14mil x
--------------------- 15mil x
--------------------- 130um
--------------------- 8.2mil
--------------------- 1.1mil
14mil
15mil
(d)
(e)
(a)
N Side Electrode
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr