OPA9433 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA9433
Infrared LED Chip
GaAs/GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer GaAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage ^V_F
1.5
1.6
V
IF=100mA
Reverse Voltage V_R
8
V
IR=10uA
Power
P_O 9.0
11
mW IF=100mA
Wavelength
λ_P
940
∆λ
45
nm IF=20mA
nm IF=20mA
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
(c)
--------------------- 10.8mil x 10.8mil
--------------------- 11.8mil x 11.8mil
--------------------- 130um
--------------------- 11mil
--------------------- 7.6mil
(d)
(e)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr