OPA9425AL Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA9425AL
Infrared LED Chip
GaAs/GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer GaAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Aluminum Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage ^VF
1.3
1.45
V
IF=20mA
Reverse Voltage ^V_R
8
A 1.14
B 1.22
Power
P_O
C
D
1.30
1.38
E 1.46
F 1.54
V
IR=10uA
mW IF=20mA
Wavelength
λ_P
940
∆λ
45
nm IF=20mA
nm IF=20mA
※ Note : LED Chip is mounted on TO-18 gold header without resin coati
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
----------------------------- 9mil x
----------------------------- 10mil x
----------------------------- 130um
------------------------------- 10mil
------------------------------- 6.5mil
9mil
10mil
(b)
(d)
(c)
(e)
(a)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr
N Side Electrode