OPA9423AL Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA9423AL
Infrared LED Chip
GaAs/GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer GaAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Aluminum Alloy
3. Electro-Optical
Characteristics
Parameter Symbol Min Typ Max Unit Condition
Forward Voltage ^V_F
1.25 1.35 V IF=20mA
Reverse Voltage ^V_R
8
V
IR=10uA
Power
A
1.09
B
1.17
C
1.24
Po
D
E
1.32
1.39
mW IF=20mA
F
1.47
G
1.55
G1
1.64
Wavelength
λ_P
940
∆λ
45
nm IF=20mA
nm IF=20mA
※ Note : LED Chip is mounted on TO-18 gold header without resin coati
4. Mechanical Data (a) Emission Area ----------------------------- 8mil x 8mil
(b) Bottom Area ----------------------------- 9mil x 9mil
(c) Bonding Pad ----------------------------- 100um
(d) Chip Thickness ------------------------------- 9mil
(e) Junction Height ------------------------------- 6.0mil
(b)
(d)
(c)
(e)
(a)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr
N Side Electrode