OPA9423 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA9423
Infrared LED Chip
AlGaAs/GaAs
1. Material
Substrate
GaAs
Epitaxial Layer GaAs
(N Type)
(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage ^VF
1.3
1.4 V IF=20mA
Reverse Voltage ^V_R
8
V IR=10uA
Power
F 1.54
P_O G _1.62
H(G1) 1.69
mW IF=20mA
Wavelength
λ_P
∆λ
940
nm IF=20mA
45
nm IF=20mA
※ Note : Power is measured by Sorter E/T system with bare chip.
※ "Min" of Po is actually "Avg Min"
4. Mechanical Data (a) Emission Area ------------------------------- 8mil x 8mil
(b) Bottom Area ------------------------------- 9mil x 9mil
(c) Bonding Pad ------------------------------- 110um
(d) Chip Thickness ---------------------------------- 10mil
(e) Junction Height ---------------------------------- 6.5mil
(b)
(d)
(c)
(e)
(a)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr
N Side Electrode