OPA9420AL Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA9420AL
Infrared LED Chip
GaAs/GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer GaAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Aluminum Alloy
3. Electro-Optical
Characteristics
Parameter Symbol Min Typ Max Unit Condition
Forward Voltage ^V_F
1.3
1.45 V IF=20mA
Reverse Voltage ^V_R
8
V IR=10uA
Power
A 1.05
1.13
B 1.13
1.21
C 1.21
1.28
Po
D
E
1.28
1.36
1.36
1.44
mW IF=20mA
F 1.44
1.52
G 1.52
1.59
G1 1.59
1.69
Wavelength
λ_P
∆λ
940
45
nm IF=20mA
nm IF=20mA
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
----------------------------- 7mil x 7mil
----------------------------- 8mil x 8mil
----------------------------- 100um
------------------------------- 9.0mil (8mil Available)
------------------------------- 4.7mil
(b)
(d)
(c)
(e)
(a)
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr
N Side Electrode