OPA9415 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA9415
Infrared LED Chip
GaAlAs/GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer GaAlAs(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical
Characteristics
Parameter Symbol Min
Typ
Max
Unit
Forward Voltage V_F
1.7
V
Reverse Voltage V_R
8
V
Power
P_O
10
17
mW
Wavelength
λ_P
940
nm
∆λ
45
nm
※ Note : Power is measured by Sorter E/T system with bare chip.
Condition
IF=100mA
IR=10uA
IF=100mA
IF=20mA
IF=20mA
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------------- 9.0mil x
--------------------------- 10.0mil x
--------------------------- 130um
--------------------------- 11mil
--------------------------- 6.7mil
9.0mil
10.0mil
(b)
(d)
(c)
(e)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr