OPA8950HN Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA8950HN
High Speed / N Side-Up
Infrared LED Chip
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (P Type) Removed
Epitaxial Layer GaAlAs (N/P Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics _{Forward Voltage} ^VF(1)
V_F(2)
1.1
V
IF=10uA
1.6
V
IF=50mA
Reverse Voltage V_R
4
V
IR=10uA
Power
P_O
6.5
mW IF=50mA
Wavelength
λ_P
888
∆λ
45
nm IF=50mA
nm IF=50mA
Rise Time
Tr
25
Fall Time
Tf
20
ns ^Tp=400ns,
Duty=50%,
ns _IFP=50mA
※ Note : LED chip is mounted on TO-18 gold header without resin coating.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
--------------------- 18.7mil x 18.7mil
--------------------- 19.7mil x 19.7mil
--------------------- double pad
---------------------
7mil
--------------------- 4.6mil
(d)
(e)
(a)
N Side Electrode
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr