OPA8847 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA8847
High Speed / N Side-Up
Infrared LED Chip
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (P Type) Removed
Epitaxial Layer GaAlAs (N/P Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics _{Forward Voltage} ^VF(1)
V_F(2)
1.1
V
IF=10uA
1.6
V
IF=100mA
Reverse Voltage V_R
5
V
IR=10uA
Power
P_O
1.65
mW IF=50mA
Wavelength
λ_P
880
∆λ
80
nm IF=20mA
nm IF=20mA
Rise Time
Tr
700
ns
Fall Time
Tf
400
ns
※ Note : LED chip is mounted on TO-18 gold header without resin coating.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
(c)
--------------------- 17.5mil x 17.5mil
--------------------- 18.5mil x 18.5mil
--------------------- double pad
--------------------- 10mil
--------------------- 9.0mil
(d)
(e)
(a)
N Side Electrode
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr