OPA8550H Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA8550H
High Speed
Infrared LED Chip
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (N Type) Removed
Epitaxial Layer GaAlAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics _{Forward Voltage} ^VF(1)
V_F(2)
1.1
1.6
1.7
V
IF=10uA
V
IF=50mA
Reverse Voltage V_R
5
V
IR=10uA
Power
P_O
13
mW IF=50mA
Wavelength
λ_P
850
∆λ
45
nm IF=50mA
nm IF=50mA
Rise Time
Tr
15
ns
Fall Time
Tf
8
ns
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
--------------------- 18.7mil x 18.7mil
--------------------- 19.7mil x 19.7mil
--------------------- double pad
---------------------
7mil
--------------------- 5.7mil
(d)
(e)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr