OPA8540EDD Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA8540EDD
High Speed
Infrared LED Chip
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (N Type) Removed
Epitaxial Layer GaAlAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics _{Forward Voltage} ^VF(1)
V_F(2)
1.1
1.6
V
IF=10mA
V
IF=250mA
Reverse Voltage V_R
5
V
IR=10uA
Power
P_O
13.0
mW IF=250mA
Wavelength
λ_P
840 850
855
nm IF=50mA
∆λ
45
nm IF=50mA
Rise Time
Tr
22.0
ns
Fall Time
Tf
13
ns
※ Note : LED chip is mounted on TO-18 gold header without resin coating.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 39.0mil x 39.0mil
--------------------- 39.4mil x 39.4mil
--------------------- 120um
---------------------
7mil
--------------------- 6.3mil
(d)
(e)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr