OPA8537RC Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA8537RC
Infrared LED Chip
GaAs/GaAlAs
1. Material
Substrate
GaAs (N Type) Removed
Epitaxial Layer GaAlAs(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbo Min Typ Max Unit Condition
Characteristics Forward Voltag ^VF
1.55 1.65
V IF=30mA
Reverse Voltage V_R 3
V IR=10uA
Power
P_O 1.2 1.4
mW IF=30mA
Wavelength ^{λP 850 863}
880
nm IF=30mA
∆λ
30
nm IF=30mA
※ Note : LED chip is mounted on TO-18 gold header without resin coati
4. Mechanical Data (a) Diameter of Emission Area ---------- 128um
(b) Bottom Area
-------------------- 210um X 330um
(c) Chip Thickness -------------------- 250um
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr