OPA8514WDD Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA8514WDD
High Speed
Infrared LED Chip
GaAlAs/GaAlAs
1. Material
Substrate
GaAlAs (N Type) Removed
Epitaxial Layer GaAlAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics _{Forward Voltage} ^VF(1)
V_F(2)
1.1
V
IF=10uA
1.6
V
IF=50mA
Reverse Voltage V_R
5
V
IR=10uA
Power
P_O
19
mW IF=50mA
Wavelength
λ_P
850
∆λ
45
nm IF=50mA
nm IF=50mA
Rise Time
Tr
22
ns
Fall Time
Tf
13
ns
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
(c)
--------------------- 12.8mil x 12.8mil
--------------------- 13.8mil x 13.8mil
--------------------- 120um
---------------------
7mil
--------------------- 6.5mil
(d)
(e)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr