OPA7740EDD Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA7740EDD
Infrared LED Chip
AlGaAs / GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer AlGaAs (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage ^V_F
2.1
V
IF=350mA
Reverse Current V_R
4
V
IR=10uA
Power
P_O 17
mW IF=350mA
Wavelength
λ_P
770
∆λ
30
nm IF=50mA
nm IF=50mA
※ Note : LED chip is mounted on TO-18 gold header without resin coatin
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
--------------------- 39.0mil x
--------------------- 40.0mil x
--------------------- 120um
--------------------- 7.8mil
39.0mil
40.0mil
(d)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr