OPA7716WDD Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Infrared LED Chip

OPA7716WDD
Infrared LED Chip
AlGaAs / GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer AlGaAs(P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage ^VF
2.0
V
IF=50mA
Reverse Current V_R
8
V
IR=10uA
Power
P_O
9
mW IF=50mA
Wavelength ^λP
770
∆λ
30
nm IF=50mA
nm IF=50mA
※ Note : Power is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
-------------------- 15.0mil x 15.0mil
-------------------- 16.0mil x 16.0mil
-------------------- 130um
-------------------- 7.8mil
(b)
(d)
(c)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr