OPA6611 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Red LED Chip

OPA6611
N Side-Up
Red LED Chip
GaAlAs/GaAs
1. Material
Substrate
GaAs (P Type)
Epitaxial Layer GaAlAs(N/P Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics _{Forward Voltage} ^V_F(1)
V_F(2)
1.6
V IF=1mA
1.9
2.2
V IF=20mA
Reverse Voltage V_R
6
V IR=10uA
Brightness Iv 500 900
mcd IF=20mA
Wavelength
λ_d
640
∆λ
20
nm IF=20mA
nm IF=20mA
※ Note : Brightness is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
(b)
(c)
--------------------- 10mil x 10mil
--------------------- 12mil x 12mil
--------------------- 130um
--------------------- 11mil
--------------------- 8.8mil
(d)
(e)
(a)
N Side Electrode
P Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr