OPA6530S1 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Point Light Source LED Chip

OPA6530S1
Point Light Source LED Chip
GaAsP/GaAs
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer GaAsP (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Aluminum Alloy
3. Electro-Optical
Characteristics
Parameter Symbol Min Typ Max Unit Condition
Forward Voltage V_F
1.75 1.9
V IF=10mA
Reverse Voltage V_R
5
V IR=10uA
Brightness Iv 25
mcd IF=20mA
Wavelength
λ_d
650
∆λ
35
nm IF=10mA
nm IF=10mA
※ Note : Brightness is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
----------------------- 5.1mil x 5.1mil
----------------------- ####### #####
----------------------- 115um
----------------------- 11mil
P side Electrode
N side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr