OPA6428URO Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Ultra Red LED Chip

OPA6428URO
Ultra Bright
Ultra Red LED Chip
GaAs/AlGaInP
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer AlGaInP (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics
V_F(1)
Forward Voltage
V_F(2)
1.7
V IF=1mA
2.2 2.4 V IF=20mA
Reverse Current ^I_R
100 uA VR=10V
D 30 45
Brightness I_v E 40
55
F 50 70
mcd IF=20mA
Wavelength
λ_d
631
nm IF=20mA
∆λ
20
nm IF=20mA
※ Note : Luminous Intensity is measured on bare chips.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
-------------------------- 10mil x 10mil
-------------------------- 11mil x 11mil
-------------------------- 130um
-------------------------- 11mil
(b)
(c)
(d)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr