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OPA6316H Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Orange LED Chip
OPA6316H
Orange LED Chip
GaAsP/GaP
1. Material
Substrate
GaP (N Type)
Epitaxial Layer GaAsP (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage VF(1)
VF(2)
1.6
V IF=1mA
2.2
V IF=20mA
Reverse Voltage VR
8
V IR=10uA
Brightness Iv 200 300
mcd IF=20mA
Wavelength
λd
618
∆λ
40
nm IF=20mA
nm IF=20mA
※ Note : Brightness is measured by Sorter E/T system with bare chip.
4. Mechanical Data (a) Emission Area
(b) Bottom Area
(c) Bonding Pad
(d) Chip Thickness
(e) Junction Height
--------------------- 10mil x 10mil
--------------------- 11mil x 11mil
--------------------- 115um
--------------------- 11mil
--------------------- 10.6mil
(b)
(d)
(c)
(e)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. +82 63 839 1111 Fax. +82 63 835 8259
www.auk.co.kr