OPA5923UYO Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Ultra Yellow LED Chip

OPA5923UYO
Ultra Bright
Ultra Yellow LED Chip
GaAs/AlGaInP
1. Material
Substrate
GaAs (N Type)
Epitaxial Layer AlGaInP (P/N Type)
2. Electrode
N(Cathode) Side Gold Alloy
P(Anode) Side Gold Alloy
3. Electro-Optical Parameter Symbol Min Typ Max Unit Condition
Characteristics Forward Voltage ^VF
2.2 2.5 V IF=20mA
Reverse Current ^I_R
100 uA VR=5V
A 80 100
Brightness
I_v
B
C
100
130
120
140
D 140 160
mcd IF=20mA
Wavelength
λ_d
590
nm IF=20mA
∆λ
20
nm IF=20mA
※ Note : Luminous Intensity is measured on bare chips.
4. Mechanical Data (a) Emission Area -------------------------- 8mil x 8mil
(b) Bottom Area -------------------------- 9mil x 9mil
(c) Bonding Pad -------------------------- 100um
(d) Chip Thickness -------------------------- 7mil
(b)
(c)
(d)
(a)
P Side Electrode
N Side Electrode
AUK Corp.
Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea
Tel. [phone] Fax. [phone]
www.auk.co.kr