MMBT3906EF Datasheet, PDF (1/4 Pages) KODENSHI KOREA CORP. – Small signal application

MMBT3906EF
PNP Silicon Transistor
Descriptions
• Small signal application
• Switching application
Features
• Low collector saturation voltage
• Low collector output capacitance
• Complementary pair with MMBT3904EF
Ordering Information
Type NO.
MMBT3906EF
Marking
Y□
①②
①Device Code ②Year&Week Code
PIN Connection
1
2
3
SOT-523F
Package Code
SOT-523F
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
-40
-40
-5
-200
150
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
V_CE(sat)
f_T
C_ob
t_d
t_r
t_s
t_f
Test Condition
I_C=-10μA, I_E=0
I_C=-1mA, I_B=0
I_E=-10μA, I_C=0
V_CE=-30V, V_EB=-3V
V_CE=-1V, I_C=-10mA
I_C=-50mA, I_B=-5mA
V_CE=-20V, I_C=-10mA,
f=100MHz
V_CB=-5V, I_E=0, f=1MHz
V_CC=-3V_dc, V_BE(off)=-0.5V_dc,
I_C=-10mA_dc, I_B1=-1mA_dc
V_CC=-3V_dc,I_C=-10mA_dc,
I_B1=I_B2=-1mA_dc
Min.
-40
-40
-5
-
100
-
Typ.
-
-
-
-
-
-
Ta=25°C
Max. Unit
-
V
-
V
-
V
-50
nA
300
-
-0.4
V
250
-
-
MHz
-
-
4.5
pF
-
-
35
ns
-
-
35
ns
-
-
225
ns
-
-
75
ns
KSD-T5E010-000
1