MMBT3904EF Datasheet, PDF (1/4 Pages) KODENSHI KOREA CORP. – Small signal application

MMBT3904EF
NPN Silicon Transistor
Descriptions
• Small signal application
• Switching application
Features
• Low collector saturation voltage
• Low collector output capacitance
• Complementary pair with MMBT3906EF
PIN Connection
3
1
2
Ordering Information
Type NO.
MMBT3904EF
Marking
Package Code
Z□
①②
①Device Code ② Year&Week Code
SOT-523F
SOT-523F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
60
40
6
200
150
150
-55~150
Ta=25°C
Unit
V
V
V
㎃
㎽
℃
℃
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitterbreakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on delay time
Rise time
Storage time
Fall Time
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CEX
h_FE
V_CE(sat)
f_T
C_ob
t_d
t_r
t_s
t_f
Test Condition
I_C=10μA, I_E=0
I_C=1mA, I_B=0
I_E=10μA, I_C=0
V_CE=30V, V_BE=-3V
V_CE=1V, I_C=10mA
I_C=50mA, I_B=5mA
V_CE=20V, I_C=10mA,
f=100MHz
V_CB=5V, I_E=0, f=1MHz
V_CC=3V, V_BE(off)=0.5V
I_C=10mA, I_B1=1mA
V_CC=3V,I_C=10mA,
I_B1=-I_B2=1mA
Min.
60
40
6
-
100
-
300
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Ta=25°C
Max. Unit
-
V
-
V
-
V
50
㎁
300
-
0.3
V
-
㎒
4
㎊
35
㎱
35
㎱
200
㎱
50
㎱
KSD-T5E009-000
1