KLT-255544 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – 1550nm InGaAsP strained MQW DFB-LD

1550nm InGaAsP strained MQW DFB-LD
KLT-255544x, 2.5G DFB LD TO CAN
Description
KLT255454x is long wavelength distributed feedback(DFB) laser diode(LD) sources in TO-56 package with flat
window or ball lens or aspherical lens cap.
KLT255454x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output
monitoring. It operates at 1550nm wavelength band and with data rates of 2.5 Gbps.
It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly), and bi-directional module.
FEATURES
High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure
Hermetically sealed TO-56 package with flat window or ball lens or aspherical lens cap
High reliability and environmental endurance
Operating wavelength of 1.55µm band
Operating temperature range from -20°C to 85°C
Data rates of 2.5Gbps
APPLICATIONS
SONET OC-24/SDH STM-8
1.25Gbps Gigabit Ethernet
Suitable for fabrication of coaxial LD module, TOSA, and Bi-Di module
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
unit
Operating temperature
Storage temperature
T_op
-20
85
o_C
T_stg
-40
100
o_C
Peak laser forward current
If
150
mA
Peak laser reverse voltage
V_rl
2
V
Peak forward monitor PD current
I_fp
2
mA
Peak reverse monitor PD voltage
V_rp
10
V
Optical and Electrical Characteristics (Top = 25°C otherwise specified)
Parameter
Symbol Min Typ
Threshold current
I_th
9
35
Rated output power
P_f
5
Operating current
I_op
25
60
Operating voltage
V_op
1.1
Slope efficiency
η
0.25 0.3
Center wavelength
λc 1530 1550
Side mode suppression ratio
SMSR 30 40
Optical rise and fall time
Monitor PD current
Monitor PD dark current
Monitor PD capacitance
t_r
0.1
t_f
0.1
I_m
0.05 0.2
I_d
C_t
10
Note: The engineering spec can be revised without any previous notice.
Max
15
50
40
80
1.5
1570
0.3
0.3
0.1
20
Unit
Test Conditions
mA ^CW
CW, Top = 85°C
mW CW, kink free
mA ^{at rated Po=5mw}
at rated Po=5mw, T_op=85°C
V at rated Po=5mw
mW/mA CW,Po=5mW
nm at rated Po=5mw
dB at rated Po=5mw
ns 20 to 80%, I_b = I_th
ns 80 to 20%, I_b = I_th
mA at rated Po=5mw , V_rp = 1V
µA V_rp = 10V
pF V_rp = 10V, 1MHz
1/2
For more information on other parts available, please visit our website: www.kodenshi.co.kr
KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
Rev.001