KLT-231412 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – 1310nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN

1310nm InGaAsP strained MQW DFB LD for 1.25G Ø2.0 TO CAN
KLT-231412x
Description
KLT231412x is long wavelength distributed feedback(DFB) laser diode(LD) sources in TO-56 package with
Ø2mm ball lens cap.
KLT231412x consists of an InGaAsP strained multi-quantum well(MQW) LD and an InGaAs PIN-PD for output
monitoring. It operates at 1310nm wavelength band and with data rates of 1.25 Gbps.
It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly), and bi-directional module.
FEATURES
High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure
Hermetically sealed TO-56 package with 2mm ball lens cap
High reliability and environmental endurance
Operating wavelength of 1.3µm band
Operating temperature range from 0°C to 70°C
Data rates of 1.25Gbps
APPLICATIONS
SONET OC-24/SDH STM-8
1.25Gbps Gigabit Ethernet
Suitable for fabrication of coaxial LD module, TOSA, and Bi-Di module
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
unit
Operating temperature
Storage temperature
T_op
0
70
o_C
T_stg
-20
85
o_C
Peak laser forward current
If
150
mA
Peak laser reverse voltage
V_rl
2
V
Peak forward monitor PD current
I_fp
2
mA
Peak reverse monitor PD voltage
V_rp
10
V
Optical and Electrical Characteristics (Top = 25°C otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Threshold current
I_th
9
30
Rated output power
P_f
5
Operating current
I_op
25
55
Operating voltage
Slope efficiency
V_op
1.1
η
0.2 0.3
Center wavelength
λc 1290 1310
Side mode suppression ratio SMSR 30 40
Optical rise and fall time
Monitor PD current
Monitor PD dark current
Monitor PD capacitance
t_r
0.1
t_f
0.1
I_m
0.05 0.2
I_d
C_t
10
Note: The engineering spec can be revised without any previous notice.
15
mA ^CW
50
CW, Top = 70°C
mW CW, kink free
40 _mA at rated P_f
70
at rated P_f, T_op = 70°C
1.5 V at rated P_f
mW/mA CW,Po=5mW
1330
0.3
0.3
0.1
20
nm at rated P_f
dB at rated P_f
ns 20 to 80%, I_b = I_th
ns 80 to 20%, I_b = I_th
mA at rated P_f , V_rp = 1V
µA V_rp = 10V
pF V_rp = 10V, 1MHz
1/2
For more information on other parts available, please visit our website: www.kodenshi.co.kr
KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
Rev.001