KLT-131452 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – 1310nm InGaAsP strained MQW for FP-LD 2mm ball lens TO CAN

1310nm InGaAsP strained MQW for FP-LD Ø2mm ball lens TO CAN
KLT-131452x
Rev.006
Description
KLT-131452x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap.
KLT-131452x consists of an InGaAsP strained multi-quantum well(MQW) laser diode(LD) and an InGaAs
PIN-PD for output monitoring. It at 1310 nm wavelength band and with data rate of 1.25Gbps.
It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly), and bi-directional
module.
FEATURES
● High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure
● Hermetically sealed TO-56 package with Ø2.0mm ball lens cap
● High reliability and environmental endurance
● Operating wavelength of 1.3µm band
● Wide operating temperature range from –40℃ to 85℃
● Data rates of 1.25Gbps
APPLICATIONS
● SONET OC-1~ OC-48/SDH STM-1 ~ STM-16
● 155Mbps, 622Mbps, and 1.25Gbps for ATM and Ethernet
● Suitable for fabrication of coaxial LD module, TOSA, and Bi-Di module
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
unit
Operating temperature
T_op
-40
85
℃
Storage temperature
T_stg
-40
100
℃
Peak laser output power
P_o
13
mW
Peak reverse laser voltage
V_rl
2
V
Peak forward monitor PD current
I_fp
2
mA
Peak reverse monitor PD voltage
V_rp
20
V
Optical and Electrical Characteristics (KLT-131452x, Top = 25℃ otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Operating temperature
Threshold current
Operating current
T_op
-40
85 _℃
I_th
4
8 15 mA CW, kink free
Iop
30 35
CW, Po=10mW
Slope efficiency
η
0.3
Operating voltage
Center wavelength
V_op
λ_c
1290
RMS spectral width
∆λ
Optical rise and fall time
Monitor PD current
Monitor PD dark current
Monitor PD capacitance
t_r
t_r
I_m
0.05
I_d
C_m
Note: The engineering spec can be revised without any previous notice.
0.4
1.1
1310
1.1
0.1
0.1
10
1.5
1330
2.2
0.2
0.2
0.1
20
CW, Po=10mW
V at rated Po=10mW
nm at rated Po=10mW
nm at rated Po=10mW
ns 20 to 80%, Ib= Ith,Po=10mW
ns 80 to 20%, Ib= Ith,Po=10mW
mA at rated Po=10mW, V_rp= 1V
µA V_rp = 10V
pF V_rp = 10V, 1MHz
1/2
For more information on other parts available, please visit our website: www.kodenshi.co.kr
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea