KLT-131451S Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – 1310nm InGaAsP strained MQW for FP-LD 1.5mm ball lens TO CAN

1310nm InGaAsP strained MQW for FP-LD Ø1.5mm ball lens TO CAN
KLT-131451S
Rev. 006
Description
KLT-131451x is long wavelength Fabry-Perot LD source in TO-56 package with ball lens cap.
KLT-131451x consists of an InGaAsP strained multi-quantum well(MQW) laser diode(LD) and an InGaAs
PIN-PD for output monitoring. It at 1310 nm wavelength band and with data rate of 1.25Gbps.
It is suitable for fabricating pigtailed LD source, TOSA(transmitter optical sub assembly), and bi-directional
module.
FEATURES
● High performance strained MQW InGaAsP LD with BH(buried hetero-junction) structure
● Hermetically sealed TO-56 package with Ø1.5mm ball lens cap
● High reliability and environmental endurance
● Operating wavelength of 1.3µm band
● Wide operating temperature range from –40℃ to 85℃
● Data rates of 1.25Gbps
APPLICATIONS
● SONET OC-1~ OC-48/SDH STM-1 ~ STM-16
● 155Mbps, 622Mbps, and 1.25Gbps for ATM and Ethernet
● Suitable for fabrication of coaxial LD module, TOSA, and Bi-Di module
Absolute Maximum Ratings
Parameter
Symbol
Min
Max
unit
Operating temperature
T_op
-40
85
℃
Storage temperature
Peak laser output power
Peak reverse laser voltage
T_stg
-40
100
℃
P_o
8
mW
V_rl
2
V
Peak forward monitor PD current
I_fp
2
mA
Peak reverse monitor PD voltage
V_rp
20
V
Optical and Electrical Characteristics (KLT-131451x Top = 25℃ otherwise specified)
Parameter
Symbol Min
Operating temperature
Threshold current
T_op
-40
I_th
4
Operating current
Iop
Slope efficiency
η
0.2
Operating voltage
V_op
Center wavelength
λ_c
1290
RMS spectral width
∆λ
Optical rise and fall time
t_r
t_r
Monitor PD current
I_m
0.05
Monitor PD dark current
I_d
Monitor PD capacitance
C_m
Note: The engineering spec can be revised without any previous notice.
Typ
8
23
0.3
1.1
1310
1
0.1
0.1
10
Max
85
15
35
1.5
1330
2
0.2
0.2
0.1
20
Unit
Test Conditions
℃
mA CW, kink free
CW, Po=5mW
CW, Po=5mW
V at rated Po=5mW
nm at rated Po=5mW
nm at rated Po=5mW
ns 20 to 80 %, Ib = Ith,Po=5mW
ns 80 to 20 %, Ib = Ith,Po=5mW
mA at rated Po=5mW , V_rp = 1V
µA V_rp = 10V
pF V_rp = 10V, 1MHz
1/2
For more information on other parts available, please visit our website: www.kodenshi.co.kr
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea