KLP-32B Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Light Emitting Diode(InGaN)

Light Emitting Diode(InGaN)
KLP-32B-X-X
KLP-32B-x-x is a high bright InGaN blue LED,
and has the optimized optical characteristics.
DIMENSIONS
1
Features
• Transparent epoxy Encapsulent
• High Optical Output
2
Applications
• Display
• Indicator
• Signage
Pin Connection
1.Cathode
2.Anode
Maximum Ratings
Parameter
Reverse Voltage (w/o Zener Option)
Reverse current ( w Zener Option)
Forward current
Pulse forward current ^*1
Power dissipation
Operating temperature
Storage temperature
Soldering Temperature ^*2
*1. I_FP Measured under duty £ 1/10 @ 1KHz
*2. Soldering time £ 5 Sec
Symbol
V_R
I_R
I_F
I_FP
P_D
T_opr.
T_stg.
T_sol.
Ratings
5
50
30
0.1
90
-30 ~ +85
-40 ~ +105
260
Electro-Optical Characteristics
Parameter
Forward voltage
Optical Output Power
Peak emission wavelength
Doninant Wave Length
Spectral half bandwidth
Half angle
Symbol
V_F
Po
Iv
λ_P
λ_d
∆λ
∆Θ
Conditions
I_F = 20 mA
I_F = 20 mA
I_F = 20 mA
I_F = 20 mA
I_F = 20 mA
I_F = 20 mA
Min
-
9.00
250
-
465
-
-
[ Ta=25°C ]
Unit
V
mA
mA
A
mW
°C
°C
°C
Typ
Max
3.2
-
12.00
-
350
-
469
-
-
478
25
-
110
-
[ Ta=25°C ]
Unit
V
mW
mcd
nm
nm
nm
deg.
1/2