KLB-520G Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Light Emitting Diode(InGaN)

Light Emitting Diode(InGaN)
KLB-520 G
KLB-520 G is a high bright InGaN Green LED,
and has the optimized optical characteristics.
DIMENSIONS
Unit : [mm]
Features
• Transparent epoxy lens
• High Optical Output
Applications
• Display
• Indicator
• Signage
• Camera
Maximum Ratings
Parameter
Symbol
Ratings
Reverse voltage
V_R
5
Forward current
I_F
30
Pulse forward current ^*1
I_FP
0.5
Power dissipation
P_D
105
Operating temperature
T_opr.
-30 ~ +85
Storage temperature
T_stg.
Soldering Temperature ^*2
T_sol.
-40 ~ +100
260
*1. I_FP Measured under duty ≤ 1/10 @ 1KHz
*2. Soldering time ≤ 5 Sec
Keep the distance more than 3mm from soldering foundation.
[ Ta=25°C ]
Unit
V
mA
A
mW
°C
°C
°C
Electro-Optical Characteristics
[ Ta=25°C ]
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V_F
I_F = 20 mA
-
3.2
3.5
V
Reverse current
I_R
V_R = 5 V
-
-
50
uA
Luminous Intensity
Iv
I_F = 20 mA
15
20
-
cd
Peak emission wavelength
λ_P
I_F = 20 mA
-
520
-
nm
Doninant Wave Length
λ_d
I_F = 20 mA
520
-
530
nm
Spectral half bandwidth
∆λ
I_F = 20 mA
-
15
-
nm
Half angle
2∆Θ_1/2
I_F = 20 mA
-
8
-
deg.
1/2