KLB-320O Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Light Emitting Diode(InGaAlP)

Light Emitting Diode(InGaAlP)
KLB-320 O
KLB-320 O is a high bright InGaAlP Orange LED,
and has the optimized optical characteristics.
DIMENSIONS
Unit : [mm]
Features
• Transparent epoxy lens
• High Optical Output
Applications
• Display
• Indicator
• Signage
• Camera
• Mobile
Maximum Ratings
Parameter
Symbol
Ratings
Reverse voltage
V_R
Forward current
I_F
Pulse forward current ^*1
I_FP
Power dissipation
P_D
Operating temperature
T_opr.
Storage temperature
T_stg.
Soldering Temperature ^*2
T_sol.
5
30
100
90
-30 ~ +85
-40 ~ +100
260
*1. I_FP Measured under duty £ 1/10 @ 1KHz
*2. Soldering time £ 5 Sec
Keep the distance more than 3mm from soldering foundation.
[ Ta=25°C ]
Unit
V
mA
A
mW
°C
°C
°C
Electro-Optical Characteristics
[ Ta=25℃ ]
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V_F
I_F = 20 mA
-
2.5
3.2
V
Reverse current
Luminous Intensity
Peak emission wavelength
I_R
V_R = 5 V
-
-
50
uA
Iv
I_F = 20 mA
8
10
-
cd
λ_P
I_F = 20 mA
-
610
-
nm
Doninant Wave Length
λ_d
I_F = 20 mA
600
-
610
nm
Spectral half bandwidth
Half angle
∆λ
I_F = 20 mA
-
15
-
nm
2∆Θ_1/2
I_F = 20 mA
-
10
-
deg.
1/2