KLB-16AI-88 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Infrared Emitting Diode(GaAlAs)

Infrared Emitting Diode(GaAlAs)
KLB-16AI-88
The KLB-16I-88 is GaAlAs infrared emitting diode
and has the optimized optical characteristics.
DIMENSIONS
Features
• Ultra Wide Viewing Angle
• 880nm wavelength
• Low forward voltage
Applications
• Display
• Indicator
• Key Pad Back Light
• Car CCD Camera
Maximum Ratings
Parameter
Symbol
Reverse Voltage
V_R
Forward current
I_F
Pulse forward current ^*1
I_FP
Power dissipation
P_D
Operating temperature
T_opr.
Storage temperature
T_stg.
Soldering Temperature ^*2
T_sol.
*1. I_FP Measured under duty ≤ 1/10 @ 1KHz
*2. Soldering time ≤ 5 Sec
Ratings
5
50
0.7
75
-20 ~ +85
-30 ~ +100
260
[ Ta=25°C ]
Unit
V
mA
A
mW
°C
°C
°C
Electro-Optical Characteristics
Parameter
Symbol
Conditions
Min
Forward voltage
V_F
I_F = 20 mA
-
Reverse current
IR
V_R=5V
-
Radiant intensity
Ie
I_F = 20 mA
1.0
Radiant Power
Po
I_F = 20 mA
-
Peak emission wavelength
λp
I_F = 20 mA
-
Spectral bandwidth
∆λ
I_F = 20 mA
Half angle
∆Θ
I_F = 20 mA
-
Typ
1.30
-
1.5
1.3
880
45
160
Max
1.5
10
-
-
-
-
[ Ta=25°C ]
Unit
V
µA
mW/sr
mW
nm
nm
deg.
1/2