KK2814 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – TECHNICAL DATA

TECHNICAL DATA
Intelligent 64 byte EEPROM KK2814
with write protect function
Features
• Internally Organized Memory 64 x 8
• Two-wire Serial Interface
• Bidirectional Data Transfer Protocol
• Byte Write Modes
• 2-byte Page Write Modes
• Write Protection Memory
• Self-timed Write/Erase Cycle (20 ms max)
• Endurance: 100000 Cycles
•Data Retention: 10 years
• On-chip Charge Pump for Programming
• Answer to Reset
• Chip Size 2,1 mm x 2,2 mm
• Operation Range from -40°C to +70°C
DC Characteristics
Parametr, Units
Supply Voltage, V
Standby Current, µA
Symbol
Vcc
Isb
Input Leakage
Ilil
Current Low Level, µA
Input Leckage
Ilih
Current High Level, µA
(SCL, RST)
Input Leakage
Ilih
Current Hign Level, µA
(TEST)
Output Leakage
Iloh
Current High Level, µA
Input Low Level Voltage, Vil
V
Input Hign Level Voltage, Vih
V
Output Low Level Voltage, Vol
V
Clock Frequency, kHz
fc
Min
4,5
Vcc - 0,8
Max
Test Condition
5,5
110 Vcc = 5,5 V
Vih = 5,5 V
Vil = 0 V
-10 Vil =0 V
10 Vih = 5,5 V
100 Vih = 5,5 V
10 Voh = 5,5 V
0,8
0,4 Iol = 2,1 mA
Vcc = 4,5 V
100