KIP-M25-1 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Optical Monitoring Photodiode Chip

Optical Monitoring Photodiode Chip
KIP-M25-1
Description
KIP-M25-1 is InGaAs PIN Photodiode chip with □250 um active square.
It is recommended for optical data communication and power monitoring.
Features
Front illuminated planar PIN-PD
Low capacitance and low dark current
High reliability and environmental endurance
Wide operating wavelength range from 1.1mm to 1.6mm
Applications
Optical Data Communications
Optical power monitoring
Absolute Maximum Ratings
Parameter
Symbol
Reverse Voltage
V_R
Maximun Optical Power Input
P_max
Forward Current
I_F
Operating Temperature
T_opr
Storage Temperature
T_stg.
Die- Attach Temperature *1
*1 : Attach Temperature Time ≤ 60 seconds max
Ratings
20
30
10
-40 ~ +85
-40 ~ +100
300
Unit
V
mW
mA
℃
℃
℃
Electro-Optical Characteristics
Parameter
Symbol Min. Typ. Max.
Active area
D
□ 250
Dark Current
Responsivity
1.31um
1.55um
I_D
0.1 1.0
0.85 0.90
S
0.90 0.95
3dB Cut off frequency
Capacitance
f_h,-3dB
0.1
0.5
-
Cp
5
7
* These specifications are subject to change without notice.
Unit
㎛
nA
mA/mW
GHz
pF
Condition
@ V_R=5V, 25℃
@ V_R=5V, 25℃
@V_R=5, RL=50Ω
@ V_R=5V, f=1MHz
Physical Dimension Properties
Parameter
Symbol
Typ.
Unit
Active area
D
□ 250
㎛
Chip Size
-
420 x 420
㎛²
bonding Pad Size (Ø)
-
100
㎛
Chip Thickness
t
120
㎛
Ordering information
KIP
KODENSHI
InGaAs
PIN Photodiode
Chip
Data Rate
M: Monitoring
1: 1.5 Gbps
2: 2.5 Gbps
Active area
05: Ø50 ㎛
07: Ø75 ㎛
25: □ 250 sq ㎛
Carrier type
1: chips in gel pack
2: chips on
submounter
3: chips on blue tape
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For more information on other parts available, please visit our website: www.kodenshi.co.kr Rev.002
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea