KIP-107-1 Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – 1.25G InGaAs PIN Photodiode Chip

1.25G InGaAs PIN Photodiode Chip
KIP-107-1
Description
KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter.
It is recommended for optical data communication with high sensitivity.
Features
Front illuminated planar PIN-PD
Low capacitance and low dark current
High reliability and environmental endurance
Wide operating wavelength range from 1.1µm to 1.6µm
Applications
Optical Data Communications for 1.25 / 2.5 Gbps
Optical power monitoring
Absolute Maximum Ratings
Parameter
Symbol
Reverse Voltage
V_R
Maximun Optical Power Input
P_max
Forward Current
I_F
Operating Temperature
T_opr
Storage Temperature
T_stg.
Die- Attach Temperature *1
*1 : Attach Temperature Time ≤ 60 seconds max
Ratings
20
30
10
-40 ~ +85
-40 ~ +100
300
Unit
V
mW
mA
℃
℃
℃
Electro-Optical Characteristics
Parameter
Symbol Min. Typ. Max.
Active area(Ø)
D
75
Dark Current
I_D
0.04 0.5
Responsivity
1.31um
1.55um
0.85 0.90
S
0.90 0.95
3dB Cut off frequency
f_h,-3dB
2
-
Capacitance
Cp
0.8 1.2
* These specifications are subject to change without notice.
Unit
㎛
nA
mA/mW
GHz
pF
Condition
@ V_R=5V, 25℃
@ V_R=5V, 25℃
@V_R=5, RL=50Ω
@ V_R=5V, f=1MHz
Physical Dimension Properties
Parameter
Symbol
Typ.
Unit
Active area(Ø)
D
75
㎛
Chip Size
-
250x250
㎛²
bonding Pad Size (Ø)
-
80
㎛
Chip Thickness
t
120
㎛
Ordering information
KIP
KODENSHI
InGaAs
PIN Photodiode
Chip
Data Rate
M: Monitoring
1: 1.5 Gbps
2: 2.5 Gbps
Active area
05: Ø50 ㎛
07: Ø75 ㎛
25: □ 250 sq ㎛
Carrier type
1: chips in gel pack
2: chips on
submounter
3: chips on blue tape
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For more information on other parts available, please visit our website: www.kodenshi.co.kr Rev.002
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea