KEM5001R Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Infrared Emitting Diode(GaAlAs)

Infrared Emitting Diode(GaAlAs)
KEM5001R
The KEM5001R is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage.
This device is optimized for speed and efficiency
at emission wavelength 870nm and has a high radiant
efficiency over a wide range of forward current.
Dimensions
0.085
Features
870nm wavelength
2.60
Low forward voltage
High power and high reliability
Available for pulse operating
Surface Mountable Leadless Package
Applications
IR Audio and Telephone
IR Communication
Optical Switch
Available for Wireless Digital Data Transmission
[Unit : mm]
0.45
0.80
3.70±0.1
* PIN Description
ANODE
CATHODE
Absolute Maximum Ratings
Parameter
Symbol
Power Dissipation
PD
Forward Current
IF
Pulse Forward Current *1
IFP
Reverse Voltage
VR
Operating Temperature
Topr.
Storage Temperature
Tstg.
Soldering Temperature^*2
Tsol
*1. Duty ratio=1/100, pulse width=0.1ms
*2. MAX 5sec
[T_A = 25 ]
Rating Unit
95
mW
50
mA
1
A
5
V
-25~+85
-25~+100
260
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Voltage
Radiant intensity
Peak Emission Wavelength
Spectral Bandwidth 50%
Half Angle
Rise Time
Symbol
V_F
V_R
P_O
p
Θ_1/2
Tr
Conditions
I_F=50㎃
I_R=10uA
I_F=50㎃
I_F=20㎃
I_F=20㎃
I_F=30mA
I_F=50mA
Min.
-
4
13
-
-
-
-
Typ.
1.6
-
16
870
45
±20
15
Max.
1.9
-
-
-
-
-
-
[T_A = 25 ]
Unit.
V
V
㎽/sr
nm
nm
deg.
ns
-1-