KEL5002A Datasheet, PDF (1/3 Pages) KODENSHI KOREA CORP. – 940nm wavelength

Infrared Emitting Diode
Description
The KEL5002A is GaAlAs infrared emitting diode that is
designed for high power, low forward voltage
This device is optimized for speed and efficiency at
emission wavelength 940nm and has a high radient
efficiency over a wide range of forward current.
This device is packaged T13/4 package.
Features
940nm wavelength
Low forward voltage
High power and high reliability
Available for pulse operating
AUK CORP.
KEL5002A
1
2
Pin Connection
1. Anode
2. Cathode
Applications
IR Audio and Telephone
IR communication
Optical Switch
Available for wireless digital data transmission
Absolute Maximum Ratings
Parameter
Symbol
Reverse Voltage
Forward Current
Power Dissipation
Pulse Forward Current*1
Operating Temperature
V_R
I_F
P_D
I_FP
Topr
Storage Temperature
Tstg
Soldering Temperature*2
Tsol
*1 : Pulse Width : Tw ≤ 100㎲, Periode : T = 10㎳
*2 : MAX 5s
[T_A = 25 ]
Min. Max.
Max.
-
5
V
-
100
㎃
-
170
㎽
-
1.0
A
-30
85
-30 100
-
260
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.