KEL3002A Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Infrared Emitting Diodes(GaAlAs)

Infrared Emitting Diodes(GaAlAs)
KEL3002A
The KEL3002A is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage
This device is optimized for speed and efficiency at
emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
Features
940nm wavelength
Low forward voltage
High power and high reliability
Available for pulse operating
Applications
IR Audio and Telephone
IR Communication
Optical switch
Available for Wireless Digital Data Transmission
Dimensions
①
②
[Unit : mm]
Absolute Maximum Ratings
Parameter
Symbol
Rating
[T_A = 25 ]
Unit
Power dissipation
PD
70
㎽
Forward current
IF
50
㎃
Pulse forward current *1
IFP
0.5
A
Reverse voltage
VR
5.0
V
Operating temp.
Topr.
-25 ~ +85
℃
Storage temp.
Tstg.
-30 ~ +85
℃
Soldering temp. *2
Tsol.
240
℃
*1. Duty ratio=1/100, pulse width=0.1ms
*2. Lead Soldering Temperature (3mm from case for 5sec).
ELECTRO- OPTICAL CHARACTERISTICS
Description
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance
C_J
Radiant intensity
Po
Peak emission wavelength
λp
Spectral bandwidth 50%
△λ
Half angle
e/2
Condition
IF=50㎃
VR=5V
f=1MHz, V=0V
IF=50mA
IF=50mA
-
-
Min.
-
-
-
18
-
-
-
Typ.
1.4
-
20
20
940
45
±20
Max.
1.7
10
-
-
-
-
-
Unit
V
㎂
pF
㎽/sr
nm
nm
deg.
-1-