KEL1001L Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Infrared Emitting Diode(GaAs)

Infrared Emitting Diode(GaAs)
KEL1001L
The KEL1001L, high-power GaAs IRED mounted
in a clear side-looking package, is compact,
narrow radiant angle, and easy to mount.
Features
High power with narrow radiant angle
Side-looking with plastic package
RoHS Compliant
Applications
Photointerrupter
Optical switches
Mouse, toys
Dimensions
[Unit : mm]
G.Tolerance : ±0.2
Absolute Maximum Ratings
Parameter
Symbol
[T_A = 25 ]
Rating Unit
Forward Current
Reverse Voltage
Pulse Forward Current*¹
Power Dissipation
Operating Temperature
I_F
V_R
I_FP
P_D
Topr.
50
mA
5
V
1
A
100
mW
-25~+85
Storage Temperature
Tstg. -30~+100
Soldering Temperature^*2
Tsol
260
*1. Pulse width tw=100µsec, cycle T=10msec
*2. Distance from end of the package =2mm, time=5sec, Max.
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Current
Capacitance
Radiant intensity
Peak Wavelength
Spectral Width at FWHM
Half Angle
Symbol
V_F
I_R
C_T
P_O
p
Conditions
I_F=20㎃
V_R=5V
f=1㎒
I_F=20㎃
I_F=20㎃
Min.
-
-
-
-
-
-
-
Typ.
1.2
-
25
5
940
50
10
Max.
2.0
100
-
-
-
-
-
[T_A = 25 ]
Unit.
V
µA
㎊
㎽/sr
nm
nm
degrees
-1-