KEL-3001A Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Infrared Emitting Diodes(GaAs)

Infrared Emitting Diodes(GaAs)
KEL-3001A
The KEL-3001A is GaAs infrared emitting diode that is designed
for high power, low forward voltage and high speed rise / fall time.
This device is optimized for speed and efficiency at emission
wavelength 940nm and has a high radient efficiency over a wide
range of forward current.
DIMENSIONS
FEATURES
• 940nm wavelength
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• IR Audio and Telephone
• Communication
• Optical Switch
• Available for wireless digital data transmission
(Unit : mm)
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Ratings
Power dissipation
PD
75
Forward current
IF
50
Pulse forward current *1
IFP
0.5
Reverse voltage
VR
5
Operating temp.
Topr.
-25 ~ +85
Storage temp.
Tstg.
-30 ~ +85
Soldering temp. *2
Tsol.
240
*1. Duty ratio=1/100, pulse width=0.1ms
*2. Lead Soldering Temperature (3mm from case for 5sec).
(Ta=25°C)
Unit
mW
mA
A
V
°C
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance
Ct
Radiant intensity
Po
Peak emission wavelength
λp
Spectral bandwidth 50%
∆λ
Half angle
∆θ
Conditions
IF=50mA
VR=5V
f=1MHz, V=0V
IF=50mA
IF=50mA
IF=50mA
IF=50mA
Min.
-
-
-
5.0
-
-
-
Typ.
1.4
-
70
8.0
940
45
± 20
(Ta=25°C)
Max. Unit
1.7
V
10
uA
-
pF
-
mW
-
nm
-
nm
-
deg.