KDTD001 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Photo transistors

Photo transistors
KDTD001
The KDTD001, a high-sensitivity NPN silicon
phototransistor mounted in a 2nd Mold package
is compact, low profile and easy to mount.
Features
Low profile package
Side-looking with plastic package
RoHS Compliance
Small 2nd Mold Package
Applications
OA machines
Photointerrupter
Dimensions
[Unit : mm]
G.Tolerance : 0.2
Absolute Maximum Ratings
Parameter
Symbol
[T_A = 25 ]
Rating Unit
C-E Voltage
E-C Voltage
Collector current
Collector power dissipation
Operating temp
V_CEO
V_ECO
I_C
P_C
Topr.
30
V
6
V
20
mA
75
mW
-25~+85
Storage temp
Tstg. -30~+100
Soldering temp
Tsol
260
*1. For MAX.5 seconds at the position of 2mm from the package
Electro-Optical Characteristics
Parameter
Collector dark current
Light current
C-E saturation voltage
Switching speeds
Rise time
Fall time
Spectral sensitivity
Peak wavelength
Half Angle
Symbol
I_CEO
I_L
V_CE(sat)
tr
tf
p
Conditions
V_CEO=10V
V_CE=5V, 1,000lx
I_C=0.5mA, 2,000lx
V_CC=10V,I_C=5mA
R_L=100
Min. Typ. Max.
-
-
100
-
1.2
-
-
0.2
-
-
3.2
-
-
3.2
-
500~1,050
-
880
-
-
15 -
[T_A = 25 ]
Unit.
nA
mA
V
nm
nm
degrees
-1-