KDT5001A_0604 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Silicon photo transistor

Silicon photo transistor
KDT5001A
The KDT5001A is high sensitivity silicon photo
transistor which converts light to electrical signal.
This photo transistor is both COB package and
easy to mount.
Features
Higly sensitive photo transistor
Chip On Board package.
High speed response.
Applications
AV Instrumemts
Touch panels for ATM & FA epuiments
Optical counter
Dimensions
[Unit : mm]
Pin Description
① EMITTER
② COLECTOR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature*¹
*1.Test Condition : t ≤ 3s
Symbol
V_CEO
V_ECO
I_C
P_C
Topr.
Tstg.
Tsol
Rating
30
5
20
75
-5~+50
-20~+80
240
[T_A = 25 ]
Unit
V
V
mA
mW
ELECTRO- OPTICAL CHARACTERISTICS
Description
Symbol
Dark Current
I_CEO
Photo Current
I_PCE
Spectral Sensitivity
Peek wavelength
Viewing Angle
Collector-Emitter Saturation Voltage
p
2 _1/2
V_CE(SAT)
Condition
V_CE=10V, E_E=0
V_CE=5V, E_E=0.5㎽/㎠,
PK^=640㎚
V_R=0V
IC=100 , E_E=0.5mW/cm²,
PK^=640nm
Min.
-
1.2
20
-
Typ.
-
-
500~1050
880
-
Max.
100
2.4
40
200
Unit
nA
mA
nm
nm
deg.
mV
-1-