KDT5001A Datasheet, PDF (1/1 Pages) KODENSHI KOREA CORP. – Phototransistor

NEW PRODUCT
Silicon photo transistor KDT5001A
Description
The KDT5001A is high sensitivity silicon photo transistor which converts
light to electrical signal.
This photo transistor is both COB package and easy to mount.
Features
- Higly sensitive photo transistor.
- Chip On Board package.
- High speed response.
Application
- AV Instrumemts.
- Touch panels for ATM & FA epuiments.
- Optical counter
Outline Dimensions
Pin Description
① EMITTER
② COLECTOR
ELECTRO- OPTICAL CHARACTERISTICS
Description
Dark Current
Symbol
I_CEO
Condition
V_CE=10V, E_E=0
Min.
-
Typ.
-
[Ta= 25 ]
Max. Unit
100
nA
Photo Current
I_PCE
V_CE=5V, E_E=0.5mW/cm²
1.2
-
PK^=640nm
2.4
mA
Spectral Sensitivity
500~1050
nm
Peek wavelength
Viewing Angle
p
2 _1/2
V_R=0V
880
nm
20
40
deg.
Collector-Emitter Saturation Voltage
V_CE(SAT)
IC=100 , E_E=0.5mW/cm²,
PK^=640nm
-
-
200
mV
1/1
Issued Date : Feb. 2006