KDT3002A Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Silicon photo transistor

Silicon photo transistor
KDT3002A
The KDT3002A is high sensitivity NPN silicon photo
transistor mounted in Φ3mm(T-1) all plastic mold type.
This photo transistor is both compact and
easy to mount.
Dimensions
Features
Higly sensitive photo transistor
Visable ray cut off mold type
Applications
VCR, Camcoders
Floppy disk drivers
Optical detectors/switch
[Unit : mm]
Absolute Maximum Ratings
Parameter
Symbol
Rating
[T_A = 25 ]
Unit
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
Operating Temperature
V_CEO
35
V
V_ECO
6
V
I_C
20
mA
P_C
75
mW
Topr.
-20~+85
Storage Temperature
Soldering Temperature*¹
Tstg.
Tsol
-30~+85
240
Notes : 1. For MAX. 5 seconds at the position of 3 mm from the package.
ELECTRO- OPTICAL CHARACTERISTICS
Description
Symbol
Dark Current
I_CEO
Light Current
ICEL
Spectral Sensitivity
Peek wavelength
p
Viewing Angle
∆θ
Response Time(Rise Time)
tr
Response Time(Fall Time)
tf
※1 Color temp. =2856K Standard Tungsten lamp
Condition
V_CE=10V, E_E=0
V_CE=10V, EV=500lx ※1
-
V_R=0V
-
V_CC=10V, Ic=1㎃
RL=100Ω
Min.
-
2.5
-
-
-
-
Typ.
-
5.0
700~1050
880
±30
2.5
4.7
Max.
200
-
-
-
-
-
Unit
nA
mA
nm
nm
deg.
㎲
㎲
-1-