K4N32 Datasheet, PDF (1/3 Pages) KODENSHI KOREA CORP. – Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)

Photocoupler
K4N32 • K4N32A
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Photo Darlington transistor in a 6-pin
package.
FEATURES
• Small Package Size
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Type 1000% (at IF=10mA, VCE=10V)
• Electrical Isolation Voltage : AC2500Vrms
• UL Recognized File No. E107486
APPLICATIONS
• Interface between two circuits of different potential
• Telephone Line Receiver, CMOS Logic Interface
• Power Supply Regulators
DIMENSION
6
5
4
(Unit : mm)
7.62 0.25
6.4
0.25
1
3
8.9 0.25
Orientation Mark
0 -15
2.54 0.25
0.5
1.2
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
6
5
4
1
2
3
MAXIMUM RATINGS
Parameter
Symbol
(Ta=25 )
Rating
Unit
Forward Current
IF
mA
Reverse Voltage
VR
V
Input
Peak Forward Current ^*1
IFP
A
Power Dissipation
PD
150
mW
Collector-Emitter Breakdown Voltage BVCEO
30
V
Emitter-Collector Breakdown Voltage BVECO
5
V
Output Collector-Base Breakdown Voltage
BVECO
30
V
Collector Current
IC
100
mA
Collector Power Dissipation
Input to Output Isolation Voltage^*2
PC
150
Viso
AC2500
mW
Vrms
Storage Temperature
Tstg
-55~+125
Operating Temperature
Topr
-30~+100
Lead Soldering Temperature^*3
Tsol
260
Total Power Dissipation
Ptot
250
mW
*1. Input current with 300 pulse width, 2% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
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