EL333 Datasheet, PDF (1/2 Pages) KODENSHI KOREA CORP. – Infrared Emitting Diode(GaAs)

Infrared Emitting Diode(GaAs)
EL333
The EL333 is a Double-end Type IR Emtting Diode
mounted in a compact clear package.
EL333 is compact size and easy to mount
on small space.
Features
· Compact package with double-end leads
· Clear plastic package
· RoHS Compliant
Applications
· Photointerrupter
· Optical switches
· Transmission sensor
Dimensions
±1
2
Anode
G.Tolerance : ± 0.2
[Unit : mm]
±1
1
Cathode
Absolute Maximum Ratings
Parameter
Symbol
[Ta = 25°C]
Rating Unit
Forward Current
Reverse Voltage
Pulse Forward Current*¹
Power Dissipation
I_F
50
mA
V_R
5
V
I_FP
1
A
P_D
75
mW
Operating Temperature
Topr.
-25~ + 85 °C
Storage Temperature
Tstg.
-30~ + 80 °C
Soldering Temperature^*2
Tsol
260
°C
*1. Pulse width tw=100µsec, cycle T=10msec
*2. Distance from end of the package =2mm, time=5sec, Max.
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Current
Capacitance
Radiant intensity
Peak Wavelength
Spectral Width at FWHM
Half Angle
Symbol
V_F
I_R
C_T
P_O
λp
∆λ
∆Θ
Conditions
I_F=50mA
V_R=5V
f=1MHz
I_F=20mA
I_F=20mA
I_F=20mA
Min.
-
-
-
0.8
-
-
-
Typ.
1.2
-
25
-
940
50
± 20
Max.
1.5
10
-
-
-
-
-
[Ta = 25°C]
Unit.
V
µA
㎊
mV
nm
nm
degrees
-1-