DP500F Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)

Description
• Suitable for low voltage large current drivers
• Excellent h_FE Linearity
• Complementary pair with DN500
• Switching Application
DP500F
PNP Silicon Transistor
PIN Connection
Ordering Information
SOT-89
Type NO.
Marking
Package Code
DP500F
P5
□YWW
SOT-89
P5: DEVICE CODE, □ : h_FE rank, YWW(Y : Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
Collector power dissipation
P_C
P_C^*
Junction temperature
T_J
Storage temperature
T_stg
* : When mounted on ceramic substrate(250 ㎟×0.8t)
Ratings
-15
-12
-5
-5
0.5
1
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CBO
BV_CEO
BV_EBO
I_C=-50 ㎂, I_E=0
I_C=-1 ㎃, I_B=0
I_E=-50 ㎂, I_C=0
Collector cut-off current
I_CBO
V_CB=-12V, I_E=0
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Base-Emitter on voltage
Transition frequency
Collector output capacitance
I_EBO
h_FE1^*
h_FE2
V_CE(sat1)
V_BE(sat)
f_T
C_ob
V_EB=-5V, I_C=0
V_CE=-1V, I_C=-100 ㎃
V_CE=-1V, I_C=-3A
I_C=-3A, I_B=-150 ㎃
I_C=-3A, I_B=-150 ㎃
V_CB=-5V, I_C=-500 ㎃
V_CB=-10V, I_E=0, f=1 ㎒
* : h_FE rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700
KSD-T5B020-000
(Ta=25°C)
Min. Typ. Max. Unit
-15
-
-
V
-12
-
-
V
-5
-
-
V
-
-
-1
㎂
-
-
-1
㎂
120
-
700
-
40
-
-
-
-
-
-0.5
V
-
-
-1.2
V
-
150
-
㎒
-
-
50
㎊
1