DP100S Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor

DP100S
PNP Silicon Transistor
Features
• Extremely low collector-to-emitter
saturation voltage
( V_CE(SAT)= -0.25V Typ. @I_C/I_B=-400mA/-20mA)
• Suitable for low voltage large current drivers
• Complementary pair with DN100S
• Switching Application
PIN Connection
3
1
Ordering Information
Type NO.
DP100S
Marking
P03 □
①②
①Device Code ② Year&Week Code
2
SOT-23F
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
-15
-12
-5
-1
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=-50μA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CEO
BV_EBO
I_C=-1mA, I_B=0
I_E=-50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=-12V, I_E=0
Emitter cut-off current
I_EBO
V_EB=-5V, I_C=0
DC current gain
h_FE1
h_FE2
V_CE=-1V, I_C=-100mA
V_CE=-1V, I_C=-1A
Collector-Emitter saturation voltage V_CE(sat) I_C=-400mA, I_B=-20mA
Base-Emitter saturation voltage
V_BE(sat) I_C=-400mA, I_B=-20mA
Transition frequency
f_T
V_CE=-5V, I_C=-50mA
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
-15
-
-
V
-12
-
-
V
-5
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
200
-
450
-
70
-
-
-
-
-
-0.3
V
-
-
-1.2
V
-
330
-
MHz
-
9
-
pF
KSD-T5C088-000
1