DN200 Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

Features
• Extremely low collector-to-emitter
saturation voltage
( V_CE(SAT)= 0.2V Typ. @I_C/I_B=1A/50mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP200
• Switching Application
Ordering Information
Type NO.
DN200
Marking
DN200
DN200
NPN Silicon Transistor
PIN Connection
C
B
E
C
B
E
TO-92
Package Code
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
15
12
5
2
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Test Condition
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=12V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=2A
I_C=1A, I_B=50mA
I_C=1A, I_B=50mA
V_CE=5V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
15
-
-
V
12
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
200
-
450
-
40
-
-
-
-
-
0.3
V
-
-
1.2
V
-
260
-
MHz
-
5
-
pF
KSD-T0A038-000
1