DN100 Datasheet, PDF (1/4 Pages) KODENSHI KOREA CORP. – Extremely low collector-to-emitter saturation voltage

DN100
NPN Silicon Transistor
Features
PIN Connection
• Extremely low collector-to-emitter
saturation voltage
C
( V_CE(SAT)= 0.15V Typ. @I_C/I_B=400mA/20mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP100
B
• Switching Application
E
C
B
E
Ordering Information
Type NO.
Marking
TO-92
Package Code
DN100
DN100
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
15
12
5
1
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
Test Condition
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=12V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=1A
I_C=400mA, I_B=20mA
I_C=400mA, I_B=20mA
V_CE=5V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
15
-
-
V
12
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
200
-
450
-
70
-
-
-
-
-
0.25
V
-
-
1.2
V
-
260
-
MHz
-
5
-
pF
KSD-T0A037-000
1