DN050S Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

DN050S
NPN Silicon Transistor
Features
• Extremely low collector-to-emitter
saturation voltage
( V_CE(SAT)=0.07V Typ. @I_C/I_B=100mA/10mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP050S
• Switching Application.
Ordering Information
Type NO.
DN050S
Marking
N02 □
①②
① Device Code ② Year&Week Code
PIN Connection
3
1
2
SOT-23F
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
15
12
5
500
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=50μA, I_E=0
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=12V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE1
h_FE2
V_CE=1V, I_C=100mA
V_CE=1V, I_C=500mA
Collector-Emitter saturation voltage V_CE(sat) I_C=100mA, I_B=10mA
Base-Emitter saturation voltage
V_BE(sat) I_C=100mA, I_B=10mA
Transition frequency
f_T
V_CE=5V, I_C=20mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
15
-
-
V
12
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
200
-
450
-
70
-
-
-
-
-
0.25
V
-
-
1.2
V
-
120
-
MHz
-
4.5
-
pF
KSD-T5C073-000
1