DN030U Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

DN030U
NPN Silicon Transistor
Features
• Extremely low collector-to-emitter
saturation voltage
( V_CE(SAT)= 0.1V Typ. @I_C/I_B=100mA/10mA)
• Suitable for low voltage large current drivers
• Complementary pair with DP030U
• Switching Application
PIN Connection
3
1
2
Ordering Information
Type NO.
DN030U
Marking
NO1 □
①②
①Device Code ② Year&Week Code
SOT-323
Package Code
SOT-323F
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
15
12
5
300
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Collector cut-off current
I_CBO
V_CB=12V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
h_FE1
h_FE2
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA^※
V_CE=1V, I_C=300mA^※
Collector-emitter saturation voltage
V_CE(sat1)
V_CE(sat2)
I_C=100mA, I_B=10mA
I_C=300mA, I_B=30mA^※
Base-emitter saturation voltage
V_BE(sat1)
V_BE(sat2)
I_C=100mA, I_B=10mA
I_C=300mA, I_B=30mA^※
Transition frequency
f_T
V_CE=5V, I_C=10mA
Collector output capacitance
C_ob
※ Pulse test : t_P≤ 250µs, Duty cycle≤ 2%
V_CB=10V, I_E=0, f=1MHz
KSD-T5D007-000
(Ta=25°C)
Min. Typ. Max. Unit
12
-
-
V
-
-
0.1
μA
-
-
0.1
μA
200
-
450
-
70
-
-
-
-
-
0.2
V
-
-
0.5
-
-
1.2
V
-
-
1.7
V
-
300
-
MHz
-
3
-
PF
1